Abstract:
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The substrate temperature during niobium sputtering may play an important role
on the quality of the thin film deposited inside a copper cavity. At high
temperature, an improvement of thin film’s structure can be expected due to the
enhancement of surface diffusion during the growth. Nevertheless, we have to
determine the maximal temperature without significant diffusion of the copper
substrate into the niobium film. Niobium films are elaborated on substrates
kept at 323K or 673K. After the sputtering, unheated samples are annealed at
temperatures ranging from 673K to 1073K. Copper and Niobium concentration
profiles are obtained by Rutherford Backscattering Spectroscopy. No copper
diffusion is detected in the bulk of the niobium film up to 1073K. We also
measure oxygen and carbon concentration by Nuclear Reaction Spectroscopy and
observe niobium films surface morphology with an Atomic Force Microscopy.
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